Dephasing in a quantum dot due to coupling with a quantum point contact

We consider the dephasing of an one-electron state in a quantum dot due to charge fluctuations in a biased quantum point contact coupled to the dot capacitively. The contribution to the dephasing rate due to the bias depends on temperature and bias in the same way as shot-noise in the point contact at zero frequency, but do not follow the |t|^2(1-|t|^2) suppression.Comment: 6 pages, no figures, Europhysics Letters styl

Coherent optical control of correlation waves of spins in semiconductors

We calculate the dynamical fluctuation spectrum of electronic spins in a semiconductor under a steady-state illumination by light containing polarization squeezing correlations. Taking into account quasi-particle lifetime and spin relaxation for this non-equilibrium situation we consider up to fourth order optical effects which are sensitive to the squeezing phases. We demonstrate the possibility to control the spin fluctuations by optically modulating these phases as a function of frequency, leading to a non-Lorentzian spectrum which is very different from the thermal equilibrium fluctuations in n-doped semiconductors. Specifically, in the time-domain spin-spin correlation can exhibit time delays and sign flips originating from the phase modulations and correlations of polarizations, respectively. For higher light intensity we expect a regime where the squeezing correlations will dominate the spectrum.Comment: 17 pages, 8 figure

Decoherence of electron beams by electromagnetic field fluctuations

Electromagnetic field fluctuations are responsible for the destruction of electron coherence (dephasing) in solids and in vacuum electron beam interference. The vacuum fluctuations are modified by conductors and dielectrics, as in the Casimir effect, and hence, bodies in the vicinity of the beams can influence the beam coherence. We calculate the quenching of interference of two beams moving in vacuum parallel to a thick plate with permittivity $\epsilon(\omega)=\epsilon_{0}+i 4\pi\sigma/\omega$. In case of an ideal conductor or dielectric $(|\epsilon|=\infty)$ the dephasing is suppressed when the beams are close to the surface of the plate, because the random tangential electric field $E_{t}$, responsible for dephasing, is zero at the surface. The situation is changed dramatically when $\epsilon_{0}$ or $\sigma$ are finite. In this case there exists a layer near the surface, where the fluctuations of $E_{t}$ are strong due to evanescent near fields. The thickness of this near - field layer is of the order of the wavelength in the dielectric or the skin depth in the conductor, corresponding to a frequency which is the inverse electron time of flight from the emitter to the detector. When the beams are within this layer their dephasing is enhanced and for slow enough electrons can be even stronger than far from the surface

Surface acoustic wave attenuation by a two-dimensional electron gas in a strong magnetic field

The propagation of a surface acoustic wave (SAW) on GaAs/AlGaAs heterostructures is studied in the case where the two-dimensional electron gas (2DEG) is subject to a strong magnetic field and a smooth random potential with correlation length Lambda and amplitude Delta. The electron wave functions are described in a quasiclassical picture using results of percolation theory for two-dimensional systems. In accordance with the experimental situation, Lambda is assumed to be much smaller than the sound wavelength 2*pi/q. This restricts the absorption of surface phonons at a filling factor \bar{\nu} approx 1/2 to electrons occupying extended trajectories of fractal structure. Both piezoelectric and deformation potential interactions of surface acoustic phonons with electrons are considered and the corresponding interaction vertices are derived. These vertices are found to differ from those valid for three-dimensional bulk phonon systems with respect to the phonon wave vector dependence. We derive the appropriate dielectric function varepsilon(omega,q) to describe the effect of screening on the electron-phonon coupling. In the low temperature, high frequency regime T << Delta (omega_q*Lambda /v_D)^{alpha/2/nu}, where omega_q is the SAW frequency and v_D is the electron drift velocity, both the attenuation coefficient Gamma and varepsilon(omega,q) are independent of temperature. The classical percolation indices give alpha/2/nu=3/7. The width of the region where a strong absorption of the SAW occurs is found to be given by the scaling law |Delta \bar{\nu}| approx (omega_q*Lambda/v_D)^{alpha/2/nu}. The dependence of the electron-phonon coupling and the screening due to the 2DEG on the filling factor leads to a double-peak structure for Gamma(\bar{\nu}).Comment: 17 pages, 3 Postscript figures, minor changes mad